Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters-Reference-Cited by-同舟云学术

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Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters

Published:2024-08 Issue: Volume:178 Page:108452
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Majchrzak D.^ORCID,Tran L.M.,Babij M.,Serafińczuk J.,Olszewski W.,Kuna R.,Opołczyńska K.,Piejko A.,Michałowski P.P.,Kudrawiec R.,Hommel D.

Funder

Narodowe Centrum Nauki

Publisher

Elsevier BV

Reference30 articles.

1. III-nitride Ultraviolet Emitters: Technology and Applications;Kneissl,2015

2. A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire;Nagasawa;Appl. Sci.,2018

3. Recent advances in packaging technologies of AlGaN-based deep ultraviolet light-emitting diodes;Liang;Adv. Mater. Technol.,2022

4. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;Kneissl;Nat. Photonics,2019

5. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review;Ren;J. Phys. Appl. Phys.,2019

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