Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate-Reference-Cited by-同舟云学术

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Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

Published:2005-12-02 Issue:No. 50 Volume:44 Page:L1516-L1518
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuchiya Yosuke,Okadome Yoshizane,Honshio Akira,Miyake Yasuto,Kawashima Takeshi,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing;Journal of Semiconductors;2024-08-01

2. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films;Chinese Physics B;2023-12-01

3. Effect of Surface Treatment in Au/Ni/ n-GaN Schottky Contacts Formed on Cleaved m-Plane Surfaces of Free-Standing n-GaN Substrates;Journal of the Society of Materials Science, Japan;2022-10-15

4. Improved structural and electrical properties of non-polar a-plane p-AlGaN epi-layers with pulsed mass flow supply technique;AOPC 2021: Micro-optics and MOEMS;2021-11-24

5. Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions;Journal of Alloys and Compounds;2021-06

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