Novel method to determine capture cross‐section activation energies by deep‐level transient spectroscopy techniques
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99366
Reference6 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. New method for complete electrical characterization of recombination properties of traps in semiconductors
3. Deep level transient spectroscopy signature analysis ofDXcenters in AlGaAs and GaAsP
4. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
5. A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
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3. The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy;Applied Sciences;2022-05-24
4. Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy;Applied Physics Letters;2022-05-23
5. Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width;Materials Research Express;2020-02-01
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