Author:
Buchwald Walter R.,Peale Robert E.,Grant Perry C.,Logan Julie V.,Webster Preston T.,Morath Christian P.
Abstract
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distinguished.
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science