Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayer

Abstract

Abstract By deep level transient spectroscopy (DLTS), emission and capture behaviors have been explicitly investigated for a single electron trap in a Si-doped β-Ga2O3 epilayer. Trap characteristics including activation energy for emission (E emi = 0.8 eV), capture cross-section of 6.40 × 10−15 cm2 and lambda-corrected trap concentration (N Ta) of 2.48 × 1013 cm−3 were revealed, together with non-emission region width (λ = 267.78 nm). By isothermal DLTS, in addition to the impact of temperature, electric-field-enhanced trap emission kinetics were studied. When a relatively low electric field was applied (E ⩽ 1.81 × 105 V cm−1 at 330 K), emission kinetics of the trap was modeled to comply with phonon-assisted tunneling, whereas the emission process was regarded to be dominated by direct tunneling for a relatively high electric field (E ⩾ 1.81 × 105 V cm−1 at 330 K). A thermal-enhanced capture process has also been disclosed and quantitatively studied, where a capture barrier energy of 0.15 eV was extracted.