Abstract
Abstract
The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3
p–n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E
emi) and the hole capture cross section (σp
) were derived to be 0.10 eV and 2.48 × 10−15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (τc
) and emission time constant (τe
). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N
Ta) of 2.73 × 1015 cm−3 was extracted, together with an electron capture cross section (σn
) of 1.42 × 10−18 cm2. This study provides a foundation for the comprehension of trap properties in β-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.
Funder
ShanghaiTech University Startup Fund
National Natural Science Foundation of China
CAS Strategic Science and Technology Program
Natural Science Foundation of Shanghai
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献