Deep level transient spectroscopy signature analysis ofDXcenters in AlGaAs and GaAsP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97192
Reference5 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. On the carrier emission from donor-related centres in GaAs1-xPx and AlxGa1-xAs
3. Electron trap behaviour in Te-doped GaAs0.6P0.4
4. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys
5. Origin of the nonexponential thermal emission kinetics ofDXcenters in GaAlAs
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