New method for complete electrical characterization of recombination properties of traps in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335501
Reference68 articles.
1. Statistics of the Recombinations of Holes and Electrons
2. Electron-Hole Recombination in Germanium
3. Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions
4. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
5. Bulk and interface imperfections in semiconductors
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