Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments-Reference-Cited by-同舟云学术

Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

Published:1970-06 Issue:6 Volume:13 Page:759-788
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sah C.T.,Forbes L.,Rosier L.L.,Tasch A.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Spectroscopic Investigation of Group-III Acceptor States in Silicon

2. Photoconductivity of Solids;Bube,1960

3. Giant traps

4. Cascade Capture of Electrons in Solids

5. Lifetime and capture cross-section studies of deep impurities in silicon

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