Investigation of high resistivity <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si57.svg" display="inline" id="d1e1353"><mml:mi>p</mml:mi></mml:math>-type FZ silicon diodes after 60Co <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si439.svg" display="inline" id="d1e1361"><mml:mi>γ</mml:mi></mml:math>-irradiation-Reference-Cited by-同舟云学术

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Published:2024-04 Issue: Volume:1061 Page:169103
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Liao C.^ORCID,Fretwurst E.,Garutti E.^ORCID,Schwandt J.^ORCID,Pintilie I.^ORCID,Nitescu A.^ORCID,Himmerlich A.^ORCID,Moll M.^ORCID,Gurimskaya Y.^ORCID,Li Z.

Publisher

Elsevier BV

Reference49 articles.

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3. Radiation effects in low gain avalanche detectors after hadron irradiations;Kramberger;J. Instrum.,2015

4. Radiation resistant LGAD design;Ferrero;Nucl. Instrum. Methods Phys. Res. A,2019

5. Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons;Mooney;Phys. Rev. B,1977

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