Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.3836/fulltext
Reference23 articles.
1. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
2. EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
3. EPR of a trapped vacancy in boron-doped silicon
4. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
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