The study of gamma-radiation induced displacement damage in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si4.svg" display="inline" id="d1e364"><mml:msup><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:math>-in-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si5.svg" display="inline" id="d1e374"><mml:mi>p</mml:mi></mml:math> silicon diodes-Reference-Cited by-同舟云学术

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The study of gamma-radiation induced displacement damage in n+-in-p silicon diodes

Published:2024-07 Issue: Volume:1064 Page:169432
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Mikeštíková M.^ORCID,Federičová P.^ORCID,Gallus P.^ORCID,Jirásek R.^ORCID,Kozáková J.,Kroll J.^ORCID,Kvasnička J.^ORCID,Latoňová V.^ORCID,Mandić I.^ORCID,Mašek K.^ORCID,Novotný P.^ORCID,Přívara R.^ORCID,Tůma P.,Zatočilová I.^ORCID

Funder

Forskningsrådet om Hälsa, Arbetsliv och Välfärd

Dipartimento di Psicologia Generale, Università degli Studi di Padova

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Elsevier BV

Reference21 articles.

1. Evolution of Silicon Sensor Technology I Particle Physics;Hartmann,2017

2. Radiation damage on p-type silicon detectors

3. Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation

4. Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon

5. Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation

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