Radiation damage on p-type silicon detectors

Author:

Pirollo S,Biggeri U,Borchi E,Bruzzi M,Catacchini E,Lazanu S,Li Z,Sciortino S

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The study of gamma-radiation induced displacement damage in n+-in-p silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-07

2. Current-Voltage Characteristics of 4 MeV Proton-Irradiated Silicon Diodes at Room Temperature;Silicon;2022-02-22

3. Current-voltage and capacitance-voltage characteristics of cadmium-doped p-silicon Schottky diodes;Sensors and Actuators A: Physical;2021-11

4. Electrical properties of 3 MeV proton irradiated silicon Schottky diodes;Physica B: Condensed Matter;2021-06

5. Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC;physica status solidi (b);2020-11-16

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