Bulk and interface imperfections in semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Precise Determination of the Multiphonon and Photon Carrier Generation Properties using the Impurity Photovoltaic Effect in Semiconductors
2. Recombination Properties of the Gold Acceptor Level in Silicon using the Impurity Photovoltaic Effect
3. THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON
4. LOW‐TEMPERATURE HIGH‐FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP‐AND SHALLOW‐LEVEL IMPURITY CENTER CONCENTRATIONS
5. DIRECT OBSERVATION OF THE MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW‐TEMPERATURE HIGH‐FREQUENCY PHOTOCAPACITANCE
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