On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors-Reference-Cited by-同舟云学术

On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors

Published:2023-07 Issue:4 Volume:13 Page:524-534
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Juhl Mattias Klaus¹^ORCID,Heinz Friedemann D.²,Coletti Gianluca³^ORCID,Rougieux Fiacre E.¹^ORCID,Sun Chang⁴^ORCID,Contreras Michelle V.¹^ORCID,Niewelt Tim²^ORCID,Krich Jacob⁵^ORCID,Schubert Martin C.²

Affiliation:

1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, Australia

2. Fraunhofer ISE, Freiburg, Germany

3. Energy Research Centre of the Netherlands (ECN), TNO Solar Energy, Petten, The Netherlands

4. Research School of Engineering, The Australian National University, Canberra, ACT, Australia

5. Department of Physics, University of Ottawa, Ottawa, ON, Canada

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10192919/10109781.pdf?arnumber=10109781

Reference48 articles.

1. Carrier Lifetimes in Semiconductors with Two Interacting or Two Independent Recombination Levels

2. Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

3. A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

4. Recombination activity of interstitial chromium and chromium-boron pairs in silicon

5. Insights on the electronic parameterisation of defects in silicon obtained from the formation of the defect repository;juhl;Proc 36th Eur Photovolt Sol Energy Conf Exhib,0

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