Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
Author:
Affiliation:
1. Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia
Funder
Australian Research Council (ARC)
Australian Renewable Energy Agency
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4881497
Reference41 articles.
1. Metal Impurities in Silicon-Device Fabrication
2. Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length
3. Transition-metal profiles in a multicrystalline silicon ingot
4. Identification of Cr in p‐type silicon using the minority carrier lifetime measurement by the surface photovoltage method
5. Recombination activity of interstitial chromium and chromium-boron pairs in silicon
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