InGaAs/GaP quantum dot light-emitting diodes on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824029
Reference24 articles.
1. In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
2. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
3. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy
4. Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage
5. GaP-nucleation on exact Si (001) substrates for III/V device integration
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1. Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy;Semiconductors;2021-02
2. Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes;Applied Physics Letters;2018-05-07
3. Thermal behavior and carrier injection of GaAs/GaP quantum dots light emitting diodes;Applied Physics Letters;2017-02-27
4. Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots;Physical Review B;2016-08-30
5. Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-05
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