Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes-Reference-Cited by-同舟云学术

Transport properties of doped AlP for the development of conductive AlP/GaP distributed Bragg reflectors and their integration into light-emitting diodes

Published:2018-05-07 Issue:19 Volume:112 Page:192107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hestroffer Karine¹^ORCID,Sperlich Dennis¹,Dadgostar Shabnam¹^ORCID,Golz Christian¹,Krumland Jannis¹,Masselink William Ted¹,Hatami Fariba¹

Affiliation:

1. Department of Physics, Humboldt-Universität zu Berlin, Newton-Str. 15, D-12489 Berlin, Germany

Funder

European Commission

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5024632

Reference22 articles.

1. Resonant cavity light‐emitting diode

2. Resonant cavity enhanced photonic devices

3. Surface-emitting laser-its birth and generation of new optoelectronics field

4. Colour-tunable light-emitting diodes based on InP/GaP nanostructures

5. Green emission from InP-GaP quantum-dot light-emitting diodes

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