Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
2. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems
3. Growth of Si/III–V-N/Si structure with two-chamber molecular beam epitaxy system for optoelectronic integrated circuits
4. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate
5. Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates
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