In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3009570
Reference12 articles.
1. Stabilities of single-layer and bilayer steps on Si(001) surfaces
2. Surfaces of silicon
3. Dissociative adsorption of molecular hydrogen on silicon surfaces
4. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
5. Reflection anisotropy spectroscopy
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