Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
2. Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
3. First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
4. Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
5. Stabilities of single-layer and bilayer steps on Si(001) surfaces
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