Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2200758
Reference11 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Control of structural defects in group III V N alloys grown on Si
3. Band Anticrossing in GaInNAs Alloys
4. Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
5. Bowing parameter of the band-gap energy of GaNxAs1−x
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