First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system-Reference-Cited by-同舟云学术

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First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system

Published:2006-03 Issue:3 Volume:3 Page:614-618
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kunert B.,Reinhard S.,Koch J.,Lampalzer M.,Volz K.,Stolz W.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference5 articles.

1. and , Optoelectronics (Cambridge Univ. Press, 2002).

2. , , and , submitted for publication.

3. , , , , , , , , , , and , submitted for publication.

4. Control of structural defects in group III V N alloys grown on Si

5. , , , and , submitted for publication.

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1. GaPAsN-based light-emitting diode on silicon;Optics & Laser Technology;2020-09

2. Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP);Organometallics;2020-04-30

3. Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces;Journal of Physics: Condensed Matter;2019-01-17

4. Inorganic and Organic Functionalisation of Silicon Studied by Density Functional Theory;High Performance Computing in Science and Engineering ' 18;2019

5. Ab initio calculations of the concentration dependent band gap reduction in dilute nitrides;Physical Review B;2018-02-01

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