Thermal behavior and carrier injection of GaAs/GaP quantum dots light emitting diodes
Author:
Affiliation:
1. Department of Physics, Humboldt-Universität zu Berlin, Newton-Str. 15, D-12489 Berlin, Germany
Funder
Yousef Jameel Foundation
European Commission (EC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4977716
Reference17 articles.
1. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
2. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
3. InGaAs/GaP quantum dot light-emitting diodes on Si
4. Room temperature electroluminescence from light-emitting diodes based on In0.5Ga0.5As/GaP self-assembled quantum dots
5. Green emission from InP-GaP quantum-dot light-emitting diodes
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