Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate-Reference-Cited by-同舟云学术

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Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Published:2011-08-15 Issue:7 Volume:99 Page:071109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liebich S.,Zimprich M.,Beyer A.,Lange C.,Franzbach D. J.,Chatterjee S.,Hossain N.,Sweeney S. J.,Volz K.,Kunert B.,Stolz W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3624927

Reference15 articles.

1. Nature of optically induced defects in Ga1−xAlxAs–GaAs double‐heterojunction laser structures

2. Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on Si

3. High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si

4. Elimination of interface defects in mismatched epilayers by a reduction in growth area

5. Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

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