Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3154548
Reference11 articles.
1. On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems
2. Polar-on-nonpolar epitaxy
3. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
4. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy
5. Orientation mediated self-assembled gallium phosphide islands grown on silicon
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