GaP-nucleation on exact Si (001) substrates for III/V device integration-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

GaP-nucleation on exact Si (001) substrates for III/V device integration

Published:2011-01 Issue:1 Volume:315 Page:37-47
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Volz Kerstin,Beyer Andreas,Witte Wiebke,Ohlmann Jens,Németh Igor,Kunert Bernardette,Stolz Wolfgang

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy

2. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

3. Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells

4. A continuous-wave Raman silicon laser

5. Optical gain in silicon nanocrystals

Cited by 295 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step;Applied Surface Science;2024-12

2. Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)‐Oriented Si;Advanced Materials Technologies;2024-07-27

3. Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD;Small;2024-05-25

4. Emerging near‐infrared luminescent materials for next‐generation broadband optical communications;InfoMat;2024-05-02

5. A Small Step for Epitaxy, a Large Step Toward Twist Angle Control in 2D Heterostructures;Advanced Materials Interfaces;2024-05-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3