AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer-Reference-Cited by-同舟云学术

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Published:2017-09 Issue:9 Volume:7 Page:095305
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Xinke¹,Gu Hong¹,Li Kuilong¹,Guo Lunchun¹,Zhu Deliang¹,Lu Youming¹,Wang Jianfeng²,Kuo Hao-Chung³^ORCID,Liu Zhihong⁴^ORCID,Liu Wenjun⁵,Chen Lin⁵,Fang Jianping⁶,Ang Kah-Wee⁴,Xu Ke²,Ao Jin-Ping¹

Affiliation:

1. College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of China

2. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou 215123, People’s Republic of China

3. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

4. Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore

5. Department of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China

6. School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

Funder

National key research and development plan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4999810

Reference31 articles.

1. 2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

2. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

3. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

4. AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

5. Al$x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

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