Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers-Reference-Cited by-同舟云学术

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Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers

Published:2023-07-26 Issue:8 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Zhang Haochen,Sun Yue,Hu Kunpeng,Yang Lei,Liang Kun,Xing Zhanyong,Wang Hu,Zhang Mingshuo,Yu Huabin,Fang Shi,Kang Yang,Sun Haiding

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-022-3694-4.pdf

Reference37 articles.

1. Zhang H, Huang C, Song K, et al. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics. Rep Prog Phys, 2021, 84: 044401

2. Huang C, Zhang H, Sun H. Ultraviolet optoelectronic devices based on AlGaN-SiC platform: towards monolithic photonics integration system. Nano Energy, 2020, 77: 105149

3. Zhong Y, Zhang J, Wu S, et al. A review on the GaN-on-Si power electronic devices. Fundamental Res, 2022, 2: 462–475

4. Sun Y, Zhang H, Yang L, et al. Correlation between electrical performance and gate width of GaN-based HEMTs. IEEE Electron Dev Lett, 2022, 43: 1199–1202

5. Zhang H, Sun Y, Song K, et al. Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles. Appl Phys Lett, 2021, 119: 072104

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1. Structural and Electrical Characteristics of GaN HEMTs With In Situ SiN_x Gate Dielectrics Grown by Rationally Modulated N₂/H₂ Carrier Gas;IEEE Transactions on Electron Devices;2024-08

2. GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels;Journal of Physics D: Applied Physics;2024-06-27

3. Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes;2024 Device Research Conference (DRC);2024-06-24

4. Enhanced performance of normally-OFF GaN HEMTs with stair-shaped p-GaN cap layer;Journal of Physics D: Applied Physics;2024-05-30

5. Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology;Heat Transfer;2024-05-27

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