High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology-Reference-Cited by-同舟云学术

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High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Published:2010-09 Issue:9 Volume:31 Page:951-953
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lu Bin,Palacios Tomás

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5556401/05518357.pdf?arnumber=5518357

Cited by 174 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors;Journal of Semiconductors;2024-09-01

2. A Review: Breakdown Voltage Enhancement of GaN Semiconductors-Based High Electron Mobility Transistors;IEEE Transactions on Device and Materials Reliability;2024-06

3. A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution;IEEE Transactions on Power Electronics;2024-01

4. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27

5. AlN/GaN HEMTs with f_max Exceeding 300 GHz by Using Ge-Doped n⁺⁺GaN Ohmic Contacts;ACS Applied Electronic Materials;2023-09-11

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