AlN/GaN HEMTs with fmax Exceeding 300 GHz by Using Ge-Doped n++GaN Ohmic Contacts-Reference-Cited by-同舟云学术

AlN/GaN HEMTs with f_max Exceeding 300 GHz by Using Ge-Doped n⁺⁺GaN Ohmic Contacts

Published:2023-09-11 Issue:9 Volume:5 Page:4786-4791
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Liuyun¹^ORCID,Huang Wei¹²,Wang Ding¹,Zhang Baoqing¹,Zhang Yibin²,Zhang Junyun²,Chen Tangsheng²,Ge Weikun¹,Wu Shaobing²,Shen Bo¹,Wang Xinqiang¹³

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Frontiers, Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

2. Nanjing Electronic Devices Institute, East Zhongshan Road, Nanjing 210016, China

3. Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China

Funder

National Key Research and Development Program of China

Government of Jiangsu Province

National Natural Science Foundation of China

Beijing Outstanding Young Scientist Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00555

Reference35 articles.

1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

2. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

3. Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

4. Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

5. High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE;Optical Materials;2024-06