Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire-Reference-Cited by-同舟云学术

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Published:2018-11-28 Issue:2 Volume:5 Page:1800651
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Wang Ding¹²³,Su Juan³,Chen Zhaoying¹,Wang Tao¹,Yang Liuyun¹,Sheng Bowen¹,Lin Shaojun¹,Rong Xin¹,Wang Ping¹,Shi Xiangyang³,Tan Wei³,Zhang Jian³,Ge Weikun¹,Shen Bo¹,Liu Yinong²,Wang Xinqiang¹

Affiliation:

1. State Key Laboratory of Artificial Microstructure Mesoscopic Physics; School of Physics; Peking University; Beijing 100871 China

2. Department of Engineering Physics; Tsinghua University; Beijing 100084 China

3. Microsystem and Terahertz Research Center; China Academy of Engineering Physics; Chengdu 610200 China

Funder

Science Challenge Project

National Natural Science Foundation of China

National Key Research and Development Program of China

NSAF Joint Fund

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aelm.201800651/fullpdf

Reference44 articles.

1. GaN Electronics

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

3. Terahertz quantum-cascade lasers

4. Resonant Tunneling in III-Nitrides

5. Molecular beam epitaxy growth of GaN, AlN and InN

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium nitride-based resonant tunneling diode oscillators;Applied Physics Letters;2024-09-09

2. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

3. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10

4. Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates;Applied Physics Letters;2024-02-12

5. AlN/GaN HEMTs with f_max Exceeding 300 GHz by Using Ge-Doped n⁺⁺GaN Ohmic Contacts;ACS Applied Electronic Materials;2023-09-11