High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation-Reference-Cited by-同舟云学术

High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

Published:2014-03 Issue:3 Volume:35 Page:315-317
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Huang Sen,Wei Ke,Liu Guoguo,Zheng Yingkui,Wang Xinhua,Pang Lei,Kong Xin,Liu Xinyu,Tang Zhikai,Yang Shu,Jiang Qimeng,Chen Kevin J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6746036/06710223.pdf?arnumber=6710223

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