Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE-Reference-Cited by-同舟云学术

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Comparative studies of GaN, n-GaN and n+-GaN contact layers on GaN/c-Al2O3 virtual substrates synthesized by PA MBE

Published:2024-06 Issue: Volume:152 Page:115471
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Seredin P.V.^ORCID,Goloshchapov D.L.,Kostomakha D.E.,Peshkov Y.A.^ORCID,Buylov N.S.,Ivkov S.A.,Mizerov A.M.^ORCID,Timoshnev S.N.,Sobolev M.S.,Ubyivovk E.V.,Zemlyakov V.I.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Elsevier BV

Reference68 articles.

1. A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap;Liu;Micromachines,2023

2. Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate;Elwaradi;J. Appl. Phys.,2023

3. High-pure AlN crystalline thin films deposited on GaN at low temperature by plasma-enhanced ALD;Zeng;Vacuum,2023

4. AlN/GaN HEMTs with fmax exceeding 300 GHz by using Ge-doped n++GaN ohmic contacts;Yang;ACS Appl. Electron. Mater.,2023

5. Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy;Wong;Thin Solid Films,2011

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