A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution-Reference-Cited by-同舟云学术

A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution

Published:2024-01 Issue:1 Volume:39 Page:517-537
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Gill Lee¹^ORCID,DasGupta Sandeepan¹,Neely Jason C.¹^ORCID,Kaplar Robert J.¹^ORCID,Michaels Alan J.²^ORCID

Affiliation:

1. Sandia National Laboratories, Albuquerque, NM, USA

2. Bradley Department of Electrical and Computer Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA

Funder

U.S. Department of Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielam/63/10339150/10261316-aam.pdf

Reference121 articles.

1. Review—Ionizing Radiation Damage Effects on GaN Devices

2. Improvements on dynamic on-state resistance in normally-off GaN HEMTs;kuring;Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage,0

3. Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

4. Review of radiation damage in GaN-based materials and devices

5. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

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