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Review of radiation damage in GaN-based materials and devices

Published:2013-09 Issue:5 Volume:31 Page:050801
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Pearton Stephen J.,Deist Richard,Ren Fan,Liu Lu,Polyakov Alexander Y.,Kim Jihyun

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4799504

Cited by 182 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties;Materials Letters;2024-12

2. Impact of radiation damage on the photoconductor and photodiode properties of GaN core–shell p–n junction microwires;Radiation Physics and Chemistry;2024-11

3. Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: A comprehensive review;Microelectronics Reliability;2024-08

4. Comparative Study of Collision Cascades and Resulting Displacement Damage in GaN, Si, and Ge;IEEE Transactions on Nuclear Science;2024-08

5. Influence of 700 keV O ³⁺ ion implantation on current transport properties of Cr/p-GaN SBD’s;Radiation Effects and Defects in Solids;2024-07-16

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