Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties
Author:
Funder
TÜBİTAK
Türk Havacılık ve Uzay Sanayii
Uludağ Üniversitesi
Bursa Uludag Universitesi
Publisher
Elsevier BV
Reference17 articles.
1. High-power hybrid GaN-based green laser diodes with ITO cladding layer
2. Ultrathin Polymer Nanofibrils for Solar-Blind Deep Ultraviolet Light Photodetectors Application
3. High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells
4. Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors
5. Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures
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