Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures-Reference-Cited by-同舟云学术

Effect of γ-ray irradiation on Schottky and ohmic contacts on AlGaN/GaN hetero-structures

Published:2020-02 Issue: Volume:105 Page:113565
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Sharma Chandan,Visvkarma Ajay Kumar,Laishram Robert,Kumar Ashish,Rawal Dipendra Singh,Vinayak Seema,Singh Rajendra

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Material properties of GaN in the context of electron devices;Morkoç;Materials Research Society Internet Journal of Nitride Semiconductor Research,1999

2. High energy gamma rays and modern electronics;Lovellette,2008

3. Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors;Liu;JVST B,2013

4. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions;Hwang;JVST B,2013

5. Neutron irradiation effect on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes;Wang;JVST,2002

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