Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Abstract

Abstract We investigate the effects of gamma-ray (γ-ray) irradiation on an In0.53Ga0.47As high electron mobility transistor (HEMT). After γ-ray radiation, the irradiated HEMT shows degradation of the maximum transconductance (g m,max ), the unity current gain cutoff frequency (f T ), and the maximum oscillation frequency (f max)—about 12.8%, 18.0%, and 16.9%, respectively—because of an increase in on-resistance (Ron) in In0.53Ga0.47As HEMTs exposed to high-dose γ-ray radiation. Moreover, we obtain a minimum noise figure (NFmin) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which is a lower value compared to a non-irradiated HEMT; this is because the gate leakage current is reduced after γ-ray irradiation.