Abstract
Abstract
In this study, an Al/Orange G (OG)/p-Si device was constructed using a solution processing method. The electronic and interfacial features of the Al/OG/p-Si structure under 60Co gamma radiation were determined using the Cheung and Norde techniques. The barrier height (ϕ
b), ideality factor (n), and series resistance (Rs) of the Al/OG/p-Si diode were computed from the current-voltage (IV) measurements. Then, the n and ϕ
b parameters were extracted as n = 2.65 ± 0.07 and ϕ
b = 0.76 ± 0.05 eV from the IV results for the irradiated Al/OG/p-Si structure. It has been seen that these parameters were higher than those of the non-irradiated sample. In addition, it was observed that the rectification ratio of the diode decreased after irradiation, particularly in the wide voltage region. Moreover, the capacitance-voltage (CV) measurements showed that the capacitance values of the irradiated Al/OG/p-Si device increased, and the conductance (G) values in the inversion section for low frequencies increased because of the formation of electron-hole pairs or crystalline changes after irradiation. Furthermore, the irradiated and non-irradiated samples were evaluated by X-ray diffraction (XRD), and shifts in the diffraction angles and traces of microstructural changes were observed in the irradiated samples. Thus, it has been found that the radiation has remarkable effects on the dielectric parameters and the electronic and microstructural features of the Al/OG/p-Si structure.
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Reference92 articles.
1. Radiation tolerant design with 0.18-micron CMOS technology;Chen,2004
2. Radiation effects on electronic devices in space;Duzellier;Aerosp. Sci.Technol.,2005
3. In situ electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtOx/β-Ga2O3 vertical schottky barrier diodes;Manikanthababu;IEEE Trans. Electron Devices,2022
4. A contribution to the characterization of radiation-induced soft errors in sigma-delta modulators and SRAM memories;Periánez, D. M,2018
5. Effects of beta-ray irradiation on the C–V and G/x–V characteristics of Au/SiO2/n-Si (MOS) structures;Tataroglu;Nuclear Instruments and Methods in Physics Research B,2007