Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference37 articles.
1. Ionizing Radiation Effect in MOS Devices and Circuits;Ma,1989
2. Ionizing Radiation Effects in MOS Oxides;Oldham,1999
3. Radiation defects induced by 20MeV electrons in MOS structures
4. Effect of ageing on x-ray induced dopant passivation in MOS capacitors
5. /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
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1. The effect of Cobalt-60 gamma irradiation on dielectric parameters and junction features of the Al/Orange G/p-Silicon diode;Physica Scripta;2023-05-23
2. The C — V and G /ω— V Electrical Characteristics of 60 Co γ-Ray Irradiated Al/Si 3 N 4 /p-Si (MIS) Structures;Chinese Physics Letters;2013-07
3. Irradiation effects of 6MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors;Radiation Physics and Chemistry;2012-10
4. 6MeV electron irradiation effects on electrical properties of Al/TiO2/n-Si MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
5. Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-11
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