Influence of 700 keV O <sup>3+</sup> ion implantation on current transport properties of Cr/p-GaN SBD’s-Reference-Cited by-同舟云学术

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Influence of 700 keV O ³⁺ ion implantation on current transport properties of Cr/p-GaN SBD’s

Published:2024-07-16 Issue: Volume: Page:1-12
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Kumar Santosh¹,Shankaregowda Rakshith Huligerepura²,Kumar Mariswamy Vinay³,Kandasami Asokan⁴,Reddy V. Rajagopal⁵,Sannathammegowda Krishnaveni²

Affiliation:

1. Department of Education in Science and Mathematics, Regional Institute of Education, Bhopal, India

2. Department of Studies in Physics, Manasagangotri, University of Mysore, Mysuru, India

3. Department of Physics, K.L.E Society's Raja Lakhmagouda Science Institute (Autonomous), Belagavi, India

4. Inter-University Accelerator Centre (IUAC), New Delhi, India

5. Department of Physics, Sri Venkateswara University Tirupati, India

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2024.2369135

Reference64 articles.

1. Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode

2. Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

3. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

4. Realization of an efficient electron source by ultraviolet-light-assisted field emission from a one-dimensional ZnO nanorods/n-GaN heterostructure photoconductive detector

5. Ahmad, I.; Akram, W. Ion Implant. Res. Appl. 2017, 1–152.

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