Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737258
Reference33 articles.
1. Measurement of 1/f noise and its application in materials science
2. Noise as a diagnostic tool for quality and reliability of electronic devices
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
5. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
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