AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process-Reference-Cited by-同舟云学术

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AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

Published:2012-05-23 Issue:6 Volume:5 Page:066501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Liu Xinke,Zhan Chunlei,Chan Kwok Wai,Liu Wei,Tan Leng Seow,Chen Kevin Jing,Yeo Yee-Chia

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=6/a=066501/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-channel nanowire devices for efficient power conversion;Nature Electronics;2021-03-25

2. Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme;Journal of Vacuum Science & Technology B;2020-05

3. GaN-on-Si HEMTs for wireless base stations;Materials Science in Semiconductor Processing;2019-08

4. Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures;Energies;2019-07-10

5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Microelectronic Engineering;2018-02

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