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GaN-on-Si HEMTs for wireless base stations

  • Published:2019-08 Issue: Volume:98 Page:100-105
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Iucolano Ferdinando,Boles Timothy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. GaN for Radar Applications;Kawai,2015

3. Defense and 5G to Propel RF GaN Market Past $1B Milestone;Higham,2018

4. Gallium nitride based HEMT devices;Zang;Compound Semiconductor Materials and Devices,2003

5. Very high power density AlGaN/GaN HEMT's;Wu;IEEE Trans. Electron Devices,2001

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1. Double π-gate AlGaN/GaN HEMT with reduced surface and buffer traps and enhanced reliability;Microelectronics Reliability;2024-08

2. Enhancing Double-Channel AlGaN/GaN HEMT Performance: Investigating the Influence of Gate Dielectric and Thickness;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

3. Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications;Microelectronics Reliability;2024-04

4. Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability;2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET);2024-03-21

5. Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors;Materials Science in Semiconductor Processing;2024-03
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