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GaN-on-Si HEMTs for wireless base stations

  • Published:2019-08 Issue: Volume:98 Page:100-105
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Iucolano Ferdinando,Boles Timothy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Physics of Semiconductor Devices;Sze,2007

2. GaN for Radar Applications;Kawai,2015

3. Defense and 5G to Propel RF GaN Market Past $1B Milestone;Higham,2018

4. Gallium nitride based HEMT devices;Zang;Compound Semiconductor Materials and Devices,2003

5. Very high power density AlGaN/GaN HEMT's;Wu;IEEE Trans. Electron Devices,2001

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1. Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors;Materials Science in Semiconductor Processing;2024-03

2. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01

3. Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications;Micro and Nanostructures;2023-10

5. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14
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