Multi-channel nanowire devices for efficient power conversion
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/s41928-021-00550-8.pdf
Reference63 articles.
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2. Singh, J. et al. 14-nm FinFET technology for analog and RF applications. IEEE Trans. Electron Devices 65, 31–37 (2018).
3. Baliga, B. J. Fundamentals of Power Semiconductor Devices (Springer, 2008).
4. Baliga, B. J. Gallium nitride devices for power electronic applications. Semicond. Sci. Technol. 28, 074011 (2013).
5. Ma, J., Erine, C., Xiang, P., Cheng, K. & Matioli, E. Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance. Appl. Phys. Lett. 113, 242102 (2018).
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