Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
Author:
Affiliation:
1. Power and Wide-Band-Gap Electronics Research Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
2. Enkris Semiconductor Inc., Suzhou 215123, People's Republic of China
Funder
Swiss National Science Foundation
H2020 European Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5064407
Reference32 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
3. 3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
4. 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
5. 900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain
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