900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain-Reference-Cited by-同舟云学术

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900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Published:2017-12 Issue:12 Volume:38 Page:1704-1707
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ma Jun^ORCID,Zhu Minghua^ORCID,Matioli Elison^ORCID

Funder

European Research Council under the European Union’s H2020 programme/ERC

Swiss National Science Foundation under Assistant Professor Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8103303/08064716.pdf?arnumber=8064716

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1. Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability;IEEE Transactions on Electron Devices;2024-01

2. Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates;physica status solidi (a);2023-12-03

3. Vertical GaN MOSFET Power Devices;Micromachines;2023-10-16

4. GaN Power Integration Technology and Its Future Prospects;IEEE Transactions on Electron Devices;2023

5. A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain;ECS Journal of Solid State Science and Technology;2022-08-01

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