Al$x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate-Reference-Cited by-同舟云学术

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Al$x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

Published:2015-12 Issue:12 Volume:36 Page:1291-1294
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tham W. H.,Bera L. K.,Ang D. S.,Dolmanan S. B.,Bhat T. N.,Tripathy S.

Funder

Singapore Economic Development Board

GLOBALFOUNDRIES Singapore Joint Scholarship Fund

Agency for Science, Technology and Research–Science and Engineering Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7328593/07299284.pdf?arnumber=7299284

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure;Electronics;2024-08-29

2. Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al_0.07Ga_0.93N back barrier layer;Semiconductor Science and Technology;2024-07-11

3. Thermal Stability of Cu/Pd₂Si/, Cu/, and Au/Ni/ Schottky Contacts to AlGaN/GaN Heterostructures;IEEE Transactions on Electron Devices;2024-01

4. Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique;Chinese Physics B;2022-09-01

5. Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT;Crystals;2022-06-10

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