2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit-Reference-Cited by-同舟云学术

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2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

Published:2016-01 Issue:1 Volume:37 Page:70-73
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsou Chuan-Wei,Wei Kai-Pin,Lian Yi-Wei,Hsu Shawn S. H.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7365515/7323809.pdf?arnumber=7323809

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3. Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study;Applied Physics Letters;2024-05-13

4. Improvement of Electrical Performance in Normally-Off Gan Mosfet with Regrown Algan Layer on the Source/Drain Region;2024

5. A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure;Chip;2023-12

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